You can now get glossy, car-paint-quality color from a coating that contains no pigment at all. The Kobe University development makes non-fading structural color applicable to complex surfaces at scale, fixes angle-dependent color and allows for applying protective layers for real-world use.

Scientists from the Yong Loo Lin School of Medicine, National University of Singapore (NUS Medicine), and St. Jude Children’s Research Hospital in the United States have discovered how blood cells release an important signalling fat called sphingosine-1-phosphate, or S1P, into the bloodstream.

Scientists from Paul Scherrer Institute PSI have used an electric field to reverse the handedness of atomic vibrations known as chiral phonons. Chiral phonons link magnetism with atomic motion. The ability to control them opens new possibilities for phonon-based information technologies. 

A new digital twin optical computing system could dramatically simplify the development of high-speed optical computing applications by allowing developers to train and optimize tasks without continuous access to physical optical hardware.

Magnesium alloys are among the lightest structural metals available, but their poor corrosion resistance and electrically insulating surface films have limited their use in energy devices. Now, researchers have developed a low-temperature Steam-Assisted Solvothermal process combined with calcination that converts a magnesium hydroxide precursor into a robust, conductive MgFe₂O₄ spinel coating. The coating combines excellent corrosion resistance with electrical conductivity, making lightweight magnesium more suitable for polymer electrolyte fuel cells and other energy applications.

Polar wurtzite nitride semiconductors such as aluminum nitride and gallium nitride underpin high-power and high-frequency electronics. Researchers have now achieved the first epitaxial growth of niobium aluminum nitride (NbAlN) on GaN while preserving its polar crystal structure. Used as a barrier layer, NbAlN increased the interfacial two-dimensional electron gas density from 5.1 × 10¹² to 1.7 × 10¹³ cm⁻², opening new possibilities for polarization-based materials design in future GaN electronic devices.