Recently, addressing the inherent timescale mismatch challenge between fast and slow responses in optoelectronic sensors, a collaborative team from Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (Yukun ZHAO, Shulong LU, Min JIANG), Fudan University (Lifeng BIAN), and Suzhou University of Science and Technology (Jianya ZHANG) has proposed an innovative monolithic integration scheme. By combining surface defect introduction and local contact interface design with a gallium nitride (GaN) nanowire lift-off technique that eliminates the interference from the underlying silicon substrate, the team integrates fast and slow responses into a single device. This results in a transparent bifunctional device capable of self-driven detection and neural synaptic integration, with omnidirectional (360°) detection capability. As a photodetector, the device demonstrates the millisecond-level response speeds, while it exhibits the second- to minute-level relaxation time as an artificial synapse, achieving an over 1000-fold contrast in response dynamics. The device has been validated in the intelligent perception systems for humanoid robots successfully, advancing the development of multifunctional monolithic optoelectronic devices and providing a solid foundation for further research in related fields.

The work entitled "A dual-mode transparent device for 360° quasi-omnidirectional self-driven photodetection and efficient ultralow-power neuromorphic computing" was published in Light: Science & Applications.