SKKU develops hafnium oxide-based next-generation memory devices for AI hardware
Peer-Reviewed Publication
Updates every hour. Last Updated: 1-Apr-2026 23:15 ET (2-Apr-2026 03:15 GMT/UTC)
A research team led by Professor Taesung Kim from the School of Mechanical Engineering at Sungkyunkwan University has developed hafnium oxide-based ferroelectric transistor arrays and successfully demonstrated their application in next-generation artificial intelligence (AI) hardware.
Based on a large number of experimental results, the reason why small-sized Goss grains can engulf surrounding large-sized grains and eventually grow abnormally was analyzed using the enhanced elastic anisotropy of ferrite at high temperatures as well as the significant molar volume difference between ferrite and inhibitors. This study entitled “Secondary recrystallization behaviors and the formation mechanism of strong Goss textures of oriented electrical steels” is published online by Frontiers of Materials Science in 2026.
A Mendelian randomization study reveals PCSK9 inhibitors may reduce low back pain (LBP) risk, while HMGCR and NPC1L1 inhibitors show no significant association, providing genetic evidence for lipid-lowering drug safety and new insights into PCSK9 pleiotropy.
Researchers from Edith Cowan University (ECU) are developing new technology that could change how drunk and dangerous drivers are identified.