New computer simulations that model every atom of a protein as it folds into its final three-dimensional form support the existence of a recently identified type of protein misfolding.

Scientists from the Institute of Oceanology of the Chinese Academy of Sciences have discovered a massive hydrogen-rich hydrothermal system beneath the western Pacific seafloor, offering a new glimpse into deep-sea serpentinization—a process in which iron- and magnesium-rich rocks chemically react with water to form serpentine minerals and release hydrogen.

Organic molecules that combine efficient light emission for displays and strong light absorption for bioimaging are difficult to design due to conflicting structural requirements. Researchers from Japan addressed this challenge by developing CzTRZCN, a single molecule that switches structure depending on light interaction, enabling both two-photon absorption and thermally activated delayed fluorescence. These dual functions are useful in OLEDs and biomedical imaging, paving the way for versatile organic materials in electronics, medicine, and life sciences.

How can quantum technologies be developed responsibly? In the journal Science, researchers from the Technical University of Munich (TUM), the University of Cambridge, Harvard University and Stanford University argue that international standards should be established before laws are enacted. Prof. Urs Gasser explains why the authors propose a quality management system for quantum technologies, how standards create trust and where even competing countries such as China and the US can cooperate.

Scandium aluminium nitride (ScAlN) has emerged as a promising barrier material for improving the performance of gallium-nitride (GaN)-based high electron mobility transistors (HEMTs). However, current methods for growing ScAlN layers on GaN require expensive equipment and high temperatures. In a new study, researchers investigated how sputtering can be used to successfully grow ScAlN layers on GaN at relatively lower temperatures and reduced costs, paving the way towards commercialization of high-performance ScAlN-based GaN devices.